New Development of Collaborative Research on Ultra High Sensitive Silicon Nanowire DNA Sensors

In the latest issue of Nano Letters (Nano Lett., 2011, 11 (9), pp 3974–3978, DOI: 10.1021 / nl202303y), Wang Yuelin / Li Tie's research group of Shanghai Institute of Microsystems and Information Technology and Chinese Application Fan Chunhai's research group at the Institute of Physics reported their progress in collaborative research on ultra-high-sensitivity silicon nanowire DNA sensors.

Researchers have developed silicon nanowire processing technology based on the top-down method based on traditional semiconductor processing technology, using silicon material's own process selectivity, and achieved precise control of nano-scale dimensions. Not only can silicon nanowires have a width of 20 nanometers, but their triangular cross-section has a larger specific surface area, which is conducive to the improvement of device performance.

Through silanization modification of silicon nanowires, self-assembly of monolayers on the surface and immobilization of single-stranded DNA probes, the DNA sensor they developed successfully achieved response to DNA target molecules as low as 1 fM. The most sensitive DNA sensor reported based on silicon nanowire FETs.

This DNA sensor can also realize the analysis of single base mismatch and the simultaneous detection of multiple pathogen DNA sequences.

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